Waferpedia

Comparison ledger

100 ICP FluorineversusPlasmalab 100 ICP-RIE

Oxford Instruments 100 ICP Fluorine, Oxford Instruments Plasmalab 100 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Plasmalab 100 ICP-RIEOxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineOxford Instruments Plasmalab 100
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Process gases used—H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[2]
Cryo Table w/ operating temp—-150 to 400C[2]
Substrate cooling—using liquid nitrogen (LN2)[2]
Configuration—RF source 300 W, 13.56 MHz[2]
Base pressure—5E-7 Torr[2]
Main Chamber Backing Pump—Adixen ADP 122P Dry pump[2]
Main Chamber Turbo Pump—Adixen ATH 1300 Turbo[2]
Load Lock—Adixen ACP 15G Dry pump[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing