Comparison ledger
Nikon 1505 G 6 E, Nikon S 306 C, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | S 306 CNikon |
|---|---|---|
| OEM | Nikon | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1988– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2002 orders accepted |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon 1505 | Nikon S 306 C |
| Specifications | ||
| Configuration | 5" reticle[1] | Resolution ≤ 100 nm[5] |
| Resolution | 650 nm[2] | ≤ 100 nm (with SHRINC)[5] |
| Numerical Aperture | 0.54[2] | — |
| Reduction | 5x[2] | — |
| Exposure Field | 15 x 15 mm[2] | — |
| Alignment Accuracy | 130 nm[2] | — |
| Wafer Size | 4 inch[1] | — |
| Light Source | g-line[3] | — |
| Introduction Year | 1988[2] | — |
| NA (Numerical Aperture) | 0.54[2] | — |
| Make | Nikon[1] | Nikon[4] |
| Model | 1505 G 6 E[1] | S 306 C[4] |
| Category | Stepper[1] | — |
| Wafer Sizes | 4 inch[1] | — |
| Exposure type | g-line[2] | — |
| NA | 0.54[2] | 0.78[5] |
| Exposure field | 9.3 x 18.8 mm[2] | — |
| Arf Wavelength | — | 193 nm[4] |
| Reduction magnification 1 | — | 4[5] |
| Resolution (without SHRINC) | — | 120 nm[6] |
| Numerical Aperture (NA) | — | 0.78[5] |
| Exposure source | — | ArF excimer laser (193 nm)[5] |
| Reduction magnification | — | 1:4[5] |
| Maximum exposure range | — | 25 × 33 mm[5] |
| Overlap accuracy (EGA, |M| + 3σ) | — | ≤ 20 nm[5] |
| Alignment accuracy (three-sigma) | — | better than 23 nm[6] |
| Throughput | — | 135 – 200 wafers per hour (200 mm) / over 85 wafers per hour (300 mm)[6] |
| Wafer size | — | 8 inch (200 mm) and 300 mm[4] |
| Type | — | Scanner[4] |
| Alignment accuracy | — | better than 23 nm[6] |
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