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Orbis Alphaversus720/740

memsstar Orbis Alpha, Plasma-Therm 720/740, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
Orbis Alphamemsstar
720/740Plasma-Therm
OEMmemsstarPlasma-Therm
CategoryEtchEtch
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Familymemsstar Orbis AlphaPlasma-Therm 720/740
Cited variants—
  • 720 (right chamber)[1]
  • 740 (left chamber)[1]
Specifications
System typeoxide etch system[2]—
Process chemistryhydrogen fluoride etchants[2]—
Footprintsmall footprint[2]—
Dimensions600 x 540 x 900 mm[2]—
ControlPC controlled[2]—
User interfaceresistive touch screen[2]—
Selectivity to silicon nitride and silicon dioxide< 5% 1σ[2]—
Uniformity< 5% 1σ[2]—
Repeatability< 5% 1σ[2]—
Endpoint capabilityunique endpoint capability[2]—
Substrate size rangesample sizes to 200 mm[2]—
Selectivity (silicon nitride and silicon dioxide)excellent (<5% 1σ)[2]—
Uniformity and repeatability<5% 1σ[2]—
Control interfacePC controlled with resistive touch screen[2]—
Endpoint detectionunique endpoint capability[2]—
Process windowlarge process window to optimize process for any structure[2]—
system type—dual chamber RIE loadlocked system[1]
chemistry—chlorine and fluorine based chemistry[1]
left chamber designation—740 (left chamber), designated Au exposure system[1]
right chamber designation—720 (right chamber), designated for chlorine and fluorine based etching of 2D materials and perovskites[1]
wafer capacity—up to 200mm diameter wafers[1]
Chemistry—chlorine and fluorine based[1]
Max wafer diameter—200mm[1]
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Sources (2)Every fact above is drawn from these public sources
  1. [1]cnf.cornell.educnf.cornell.edu
  2. [2]pnf.uchicago.edupnf.uchicago.edu