Waferpedia

Comparison ledger

EDC-HL-15versusWS-650-8

Laurell EDC-HL-15, Laurell WS-650-8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EDC-HL-15Laurell
WS-650-8Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size300mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation650-series—
FamilyLaurell EDC-HL-15Laurell WS-650-8
Cited variants
  • EDC-HL-15 B650-series[1]
  • EDC-HL-23B650-series[1]
  • EDC-HL-8B650-series[1]
Specifications
ModelEDC-HL-15 B[1]WS-650-8B[2]
Series650-series EDC system[1]650-series[2]
Wafer/substrate capacityUp to ø 300 mm wafers and 9" × 9" (229 mm × 229 mm) substrates[1]—
Maximum speed capability12,000 RPM with vacuum hold-down[1]—
Recommended speed3,000 RPM[1]—
Recommended chuck typeNon-vacuum chucks[1]—
Power95 to 240 VAC, 47/63 Hz, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
CategorySpin coater[1]Spin coater[2]
Wafer capacityUp to 300mm wafers[1]Up to 200 mm wafers[2]
Substrate capacity9 in × 9 in (229mm × 229mm) substrates[1]Up to 7 in x 7 in (178 mm x 178 mm) substrates[2]
Product type—Spin coater[2]
Maximum rotational speed—12,000 RPM[2]
Basis for max speed rating—Based on a 100 mm silicon wafer[2]
Process controller—650-series process controller with robust microprocessor and accompanying PC software[2]
Power requirement—95 to 240 VAC, 47/63 Hz, approximately 300 W[2]
Nitrogen/CDA process/seal purge—60 to 70 PSIG (4 to 5 bar)[2]
Vacuum suggestion—25 to 28 inches Hg; 4.5 SCFM at 0 inches Hg[2]
Applications—Coating, etching, developing, rinsing-drying, and cleaning[2]
Speed reference condition—Based on a 100mm silicon wafer[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org