Comparison ledger
Lam Research AutoEtch 590, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | AutoEtch 590Lam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 590 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Cassette-to-cassette automatic plasma etching platform[1] | — |
| Chamber structure | Double airlock chamber structure[1] | — |
| Plasma configuration | Parallel plate plasma etching configuration[1] | — |
| Wafer handling | Automatic cassette-to-cassette wafer handling; single wafer plasma etch processing platform[1] | — |
| Control system | Upgraded Allwin21 PC controller and touchscreen monitor[1] | — |
| Programmable parameters | RF power, chamber pressure, gas flow control, electrode spacing, multi-step process recipes[1] | — |
| OEM | Lam Research[2] | — |
| Model | AutoEtch 590[2] | — |
| Equipment type | Etcher[2] | — |
| Wafer size | 4"~6"[1] | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
| Process platform | Single wafer plasma etch processing platform[1] | — |
| Control interface | Allwin21 upgraded PC controller and industrial touchscreen monitor interface[1] | — |
| Process parameters | Programmable RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
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