Comparison ledger
Lam Research 2300 Versys Kiyo, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 2300 Versys KiyoLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research 2300 Versys Kiyo | Oxford Instruments 100 ICP Fluorine |
| Cited variants | — | |
| Specifications | ||
| Wafer Size | 300mm (12 inch)[1] | — |
| Configuration (Kiyo 2300 V2) | 4 Kiyo CX chambers, 3 load ports, ATM robot with one end effector, VTM robot with dual end effectors, software version SP15-HF6, communication protocols RS232 and LON[1] | — |
| Application | Polysilicon Etch[1] | — |
| Plasma Source | Dual-frequency CCP[4] | — |
| Power System | 3kW RF generator with independent bias and source tuning[4] | — |
| Gas Configuration | Up to 10 gas lines, including reactive gases (CF₄, Cl₂, HBr) and radicals (O₂, N₂)[4] | — |
| Throughput | 60–100 wafers/hour (node-dependent)[4] | — |
| Wafer Cooling | ESC with ±1°C stability[4] | — |
| Aspect Ratio Capability | >30:1[4] | — |
| Chamber Design | Dual-chamber configuration with isolated process and exhaust zones[4] | — |
| Plasma Source Frequencies | 13.56 MHz + 2 MHz[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[6] |
| Cryo DRIE etch rate | — | up to 5 µm/min[6] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[6] |
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