Waferpedia

Comparison ledger

2300 e 5 Kiyoversus100 ICP Fluorine

Lam Research 2300 e 5 Kiyo, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
2300 e 5 KiyoLam Research
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300Oxford Instruments 100 ICP Fluorine
Specifications
Configuration3 Chamber + 1 Strip[1]—
LoadportTDK TAS300[1]—
ATM RobotKawasaki P/N 3NT510B-A002[1]—
TM RobotBrooks 201600-294-0002[1]—
MKS E28D-29237 Process Vacuum Gauge0.1 Torr[1]—
MKS 625D-30518 Chamber Vacuum Gauge1 Torr[1]—
Number of Chambers3 Chamber + 1 Strip[1]—
Turbo PumpEdwards STP-XA3203CV[1]—
Turbo Pump ControllerEdwards SCU-1600[1]—
Bias RF GeneratorLam 3156110-214[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu