Waferpedia

Comparison ledger

EV 501 Waferversus1 WBS 1 Wafer Substrate

EV Group EV 501 Wafer, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EV 501 WaferEV Group
OEMEV GroupLogitech
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeCapable of thermo compression, fusion or anodic wafer bonding—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group EV 501 WaferLogitech 1 WBS 1 Wafer Substrate
Specifications
ConfigurationRefurbished[1]—
Wafer sizeCapable of thermo compression, fusion or anodic wafer bonding[1]—
ThicknessMax wafer stack thickness 6 mm[1]—
Bottom side heater550°C max. in 1°C steps[1]—
Temperature uniformity± 1,5 %[1]—
Bonding capabilityCapable of thermo compression, fusion or anodic wafer bonding[1]—
Bond chamberBond chamber for small pieces up to 150 mm wafers (with correct tooling)[1]—
Vacuum pumpTurbo Pump[1]—
Power supplyHigh voltage power supply for anodic bonding (additional tooling may be required)[1]—
ElectronicsElectronics Rack[1]—
Control/softwareComputer & Software[1]—
DisplayLCD Monitor[1]—
PumpRoughing Pump[1]—
ManualOperations Manual[1]—
ConditionRefurbished[1]—
Wafer Size—6 inch[2]

Plan your fab

Building a Packaging & Bonding process? Get a complete equipment list.

Open the fab equipment planner →
Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]Equipment inventory listing