Waferpedia

Comparison ledger

501 Waferversus520

EV Group 501 Wafer, EV Group 520, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
501 WaferEV Group
520EV Group
OEMEV GroupEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeManual wafer load substrate bonderManual wafer load substrate bonder
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 501 WaferEV Group 520
Specifications
Wafer sizeManual wafer load substrate bonder[1]Manual wafer load substrate bonder[3]
ConfigurationCapable of fusion compression bonding[1]Refurbished[3]
Max Bond Force7 kN[1]7 kN[3]
Top side heater550°C max. in 1°C steps[1]—
Bottom side heater550°C max. in 1°C steps[1]—
Temperature uniformity± 1,5 %[1]± 1,5 %[3]
Wafer sizes2, 3, 4, 5, 6 inch (up to 150 mm)[1]—
Substrate sizesingle chips to 200 mm[2]—
Max bond force7 kN (source 1) or up to 20 kN (source 2)[1]—
Top side heater max temperature550°C in 1°C steps (source 1)[1]—
Bottom side heater max temperature550°C in 1°C steps (source 1)[1]—
Maximum temperature (source 2)up to 450°C[2]—
Vacuum (standard)1x10-1 mbar[2]—
Vacuum (optional)1x10-5 mbar[2]—
Power supply for anodic bonding0-2000 V, 0-50 mA[2]—
Footprint0.8 m2[2]—
Conversion timeless than 5 minutes[2]—
Control softwareWindows-based[1]—
Phase—3 Phase[3]
Wafer Size—up to 150 mm capable[3]
Vacuum Chuck—6"/150mm diameter chuck[3]
Top Side Heater—550°C max. in 1°C steps[3]
Bottom Side Heater—550°C max. in 1°C steps[3]

Plan your fab

Building a Packaging & Bonding process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]aggiefab.tamu.eduaggiefab.tamu.edu
  3. [3]inventory listing