Comparison ledger
Brewer Science B2, Heidelberg Instruments VPG200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | B2Brewer Science | VPG200Heidelberg Instruments |
|---|---|---|
| OEM | Brewer Science | Heidelberg Instruments |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | DUV | 600 nm minimum resolution with thin photoresist (< 1 µm) |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | Linux workstation |
| Generation | — | — |
| Family | Brewer Science B2 | Heidelberg Instruments VPG200 |
| Cited variants | — | |
| Specifications | ||
| Type | Developable BARC[2] | Volume Pattern Generator (laser pattern generator)[1] |
| Name in ACT-8 process list | B2 DUV42P[2] | — |
| Configured wafer size on ACT-8 | 100 mm (4") wafers[2] | — |
| Exposure source | — | 355 nm wavelength, pulsed Q-switched DPSS laser[1] |
| Alignment cameras | — | 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only)[1] |
| Autofocus | — | Real time autofocus[1] |
| Stage system | — | Position control with interferometers, chuck with vacuum for various substrate sizes[1] |
| Supported substrates | — | Masks and reticules (4, 5, 6, 7 inch) and wafer (100 and 150 mm SEMI-standard) cassette station[1] |
| Write heads | — | 3 interchangeable optics: Write Head 4, 10, 20 mm focal length[1] |
| Critical dimension | — | 0.6, 0.9 and 2.0 μm[1] |
| Minimum feature size | — | 500 nm[1] |
| Pattern edge roughness | — | XY direction dependent; max 90, 140 and 250 nm[1] |
| Alignment accuracy | — | <300, 400, 800 nm[1] |
| Maximum substrate size | — | 7" x 7" square or 200 mm diameter[1] |
| Maximum exposure area | — | 7" x 7" square[1] |
| Design file compatibility | — | cif, gdsii, dxf, gerber[1] |
| Writing time with handling | — | 5" x 5" square (110 x 110 mm): 7, 18, 65 min[1] |
| Batch processing | — | Up to 20 5" masks or 25 wafers[1] |
| Laser wavelength | — | 355 nm (pulsed Q-switched DPSS laser)[1] |
| Imaging method | — | Projection of two linear arrays of 1000 pixels combined with mechanical stage movement[1] |
| Resolution (minimum) | — | Approximately 600 nm with thin photoresist (< 1 µm) for 4 mm write head[1] |
| Critical dimension (4 mm write head) | — | 0.6 µm[1] |
| Critical dimension (10 mm write head) | — | 0.9 µm[1] |
| Critical dimension (20 mm write head) | — | 2.0 µm[1] |
| Pattern edge roughness (4 mm write head) | — | max 90 nm (XY direction dependent)[1] |
| Pattern edge roughness (10 mm write head) | — | max 140 nm (XY direction dependent)[1] |
| Pattern edge roughness (20 mm write head) | — | max 250 nm (XY direction dependent)[1] |
| Alignment accuracy (4 mm write head) | — | < 300 nm (top side alignment)[1] |
| Alignment accuracy (10 mm write head) | — | < 400 nm (top side alignment)[1] |
| Alignment accuracy (20 mm write head) | — | < 800 nm (top side alignment)[1] |
| Substrate handling | — | Cassette station for masks and reticles (4, 5, 6, 7 inch) and wafers (100 and 150 mm SEMI-standard)[1] |
| Optional write heads (focal length) | — | 4 mm, 10 mm, 20 mm[1] |
| CAD file formats | — | cif, gdsii, dxf, gerber[1] |
| Writing time (5 inch x 5 inch square, with handling) | — | 7 min (4 mm head), 18 min (10 mm head), 65 min (20 mm head)[1] |
| Image reconstruction | — | Projection of two linear arrays of 1000 pixels combined with mechanical movement of the stage[1] |
| Critical Dimension | — | 0.6, 0.9 and 2.0 μm for 4, 10, 20 mm write heads respectively[1] |
| Designs compatibility | — | cif, gdsii, dxf, gerber[1] |
| Interchangeable optics | — | Write Head 4, 10, 20 mm focal length[1] |
| Writing time with handling (5"x5" sq. 110x110 mm) | — | 7, 18, 65 min for 4, 10, 20 mm write heads[1] |
| Alignment | — | 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only); overlay exposure with top side alignment requires wafer flat pre-alignment with maximum tolerance of ±10 mrad[1] |
| Resolution | — | Minimum about 600 nm with thin photoresist thickness (<1 µm)[1] |
| Wafer cassette support | — | 100 and 150 mm SEMI-standard wafers[1] |
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