Comparison ledger
Axcelis 200 PCU, Axcelis NV GSD 200 Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | NV GSD 200 IonAxcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Axcelis NV GSD 200 |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | — |
| Phase | 3 Phase[3] | 3 Phase[4] |
| Voltage | 400 V[3] | 208V, 710A[4] |
| Gases | — | B/As/Ar[4] |
| Total energy | — | 200 KEV[4] |
| Throughput | — | 210 pieces/hour[4] |
| Configuration | — | Features:[4] |
| Wafer size | — | 6 inch[4] |
| Power | — | 3 Phase, 208V, 710A[4] |
| Process gases | — | B/As/Ar[4] |
| SDS gas lines | — | 2 lines (ASH3 and PH3)[4] |
| HP gas lines | — | 2 lines (BF3 and ARGON)[4] |
| Cassette | — | 25 slots, 4 cassettes capacity[4] |
| Source head | — | ELS source head[4] |
| Control hardware | — | 2 SUN Workstations, VME 177 cell controller[4] |
| Post acceleration high voltage | — | 80 KEV[4] |
| Drive | — | Belt type rotary drive[4] |
| Implant angle | — | Variable, 2-axis[4] |
| Dose controller | — | Real-time patented dose controller[4] |
| Dose range | — | 5E11~1E16 Ions/cm2[4] |
| Arm | — | Std Arm 150mm[4] |
| Wafer holder | — | Std 150mm[4] |
| Beam energy | — | 5 KeV[4] |
| Beam current | — | 50 mA[4] |
| Electron shower | — | P-Shower electron shower[4] |
| CE marking | — | CE marked[4] |
| Beam Current | — | 50 mACE marked[4] |
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