Comparison ledger
Axcelis 200 PCU, Axcelis NV 10 160 Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | NV 10 160 IonAxcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | Multiple wafer disks |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Axcelis NV 10 160 Ion |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | — |
| Phase | 3 Phase[3] | — |
| Voltage | 400 V[3] | — |
| Max. Implant Energy | — | 160 keV[4] |
| Beam Current Range | — | 0.5-8 mA[4] |
| End Station | — | Manual Load[4] |
| Automatic Wafer Handling | — | No AT4[4] |
| Source | — | Standard[4] |
| Gas Box | — | 4 ELB Strings[4] |
| Vacuum | — | Dry Pump + Diffusion Pump[4] |
| Control System | — | Standard Console[4] |
| Wafer size | — | Multiple wafer disks[4] |
| Vacuum System | — | Dry Pump + Diffusion Pump[4] |
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