Comparison ledger
ASML 5500, EV Group EVG 150, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500ASML | EVG 150EV Group |
|---|---|---|
| OEM | ASML | EV Group |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 248 nm (KrF) DUV | — |
| Introduced | — | — |
| Production run | 1991– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | ASML 5500 | EV Group EVG 150 |
| Cited variants | — | |
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | PAS 5500/300[1] | — |
| Description | Deep-UV Stepper Photolithography[1] | — |
| Exposure wavelength | 248 nm (KrF)[1] | — |
| Configured wafer size | 4 in wafers[1] | — |
| Maximum wafer size | 4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1] | — |
| Layer-to-layer overlay accuracy | better than 30 nm[1] | — |
| Minimum feature size | ≤150 nm isolated lines; ≤200 nm dense patterns[1] | — |
| Full-field useable exposure area | intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1] | — |
| Sample size | 100 mm wafers with SEMI std. major flat[1] | — |
| Alignment accuracy | < 50 nm[1] | — |
| Wafer thickness | minimum approximately 200 µm; maximum approximately 1.1 mm[1] | — |
| Maximum dose | ~100 mJ[1] | — |
| Minimum Feature Size (dense) | ≤200 nm[1] | — |
| Minimum Feature Size (isolated lines) | ≤150 nm[1] | — |
| Overlay Accuracy | Better than 30 nm[1] | — |
| Maximum Field Size (usable exposure area) | 22 mm x 27 mm rectangle within a 31 mm diameter circle[1] | — |
| Wafer Size (standard) | 4 inch (100 mm)[1] | — |
| Throughput | Typically minutes per wafer (multiple 4-inch wafers)[1] | — |
| Reduction Ratio | 5x (for some variants, e.g., /200 and /60)[2] | — |
| Numerical Aperture (variable) | 0.48-0.60 (for /200 variant)[2] | — |
| Alignment Accuracy | < 50 nm (for /300 variant)[1] | — |
| Resolution (PAS 5500/300) | ≤150 nm isolated lines, ≤200 nm dense patterns[1] | — |
| Exposure wavelength (PAS 5500/60) | 365 nm[3] | — |
| Reduction ratio (PAS 5500/60) | 5:1[3] | — |
| Wafer size (PAS 5500/300) | 100 mm (4 inch) wafers with SEMI standard flat[1] | — |
| Overlay accuracy (PAS 5500/300) | better than 30 nm[1] | — |
| Resolution (PAS 5500/200) | 350 nm[2] | — |
| Numerical aperture (PAS 5500/200) | 0.48-0.60 variable[2] | — |
| Maximum field size (PAS 5500/200) | 22x22 mm[2] | — |
| Minimum feature size (PAS 5500/60) | 450 nm[3] | — |
| Tool type | — | Modular cluster tool for coating and development of i-line photoresists[5] |
| Loading/unloading ports | — | Two loading/unloading ports: one cassette for coating and one cassette for development[5] |
| Wafer centering | — | Optical wafer centering station[5] |
| Spin-coating modules | — | Three spin-coating modules: coater A, coater B, and coater C[5] |
| Coater A use | — | Low-viscosity photoresist[5] |
| Coater B use | — | High-viscosity photoresist[5] |
| Coater C use | — | Bottom layers[5] |
| Development module | — | One development module with puddle and spray options[5] |
| Hotplates and coolplates | — | Three stacks of hotplates (8 in total) and coolplates (3 in total)[5] |
| HMDS priming | — | Additional HMDS-priming module[5] |
| Robot | — | Dual end effector robot[5] |
| Wafer handling | — | Standard SEMI-wafers of 100 mm and 150 mm diameter[5] |
| Substrate types | — | Opaque wafers (silicon, SOI) or transparent wafers (glass, fused-silica, sapphire)[5] |
| Process stability features | — | Airborne molecular contamination (AMC) filter and active control of chamber and resist/developer lines temperature[5] |
| Available photoresists | — | AZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E[5] |
| Available bottom layers | — | LOR 5A, LOR 15C, XHRiC-16 II[5] |
| Surface preparation options | — | HMDS, dehydrate, or none[5] |
| Solvent clean options | — | Standard or edge bead removal (EBR)[5] |
| Developer chemistries | — | AZ 726 MIF, AZ 400K 1:3.5, AZ developer III[5] |
| wafer diameter | — | 100mm and 150mm[5] |
| loading/unloading ports | — | Two (one cassette for coating, one for development)[5] |
| wafer centering station | — | Optical wafer centering station[5] |
| spin-coating modules | — | Three (coater A: low-viscosity PR, coater B: high-viscosity PR, coater C: bottom layers)[5] |
| development module | — | One, with both puddle and spray options[5] |
| hotplates | — | Three stacks, 8 in total[5] |
| coolplates | — | Three stacks, 3 in total[5] |
| additional module | — | HMDS-priming module[5] |
| wafer types | — | Opaque (silicon, SOI) or transparent (glass, fused-silica, sapphire)[5] |
| process enhancement | — | AMC filter and active control of chamber and resist/developer line temperature[5] |
| Wafer sizes | — | 100mm and 150mm diameter[5] |
| Loading ports | — | Two loading/unloading ports[5] |
| Hotplates | — | Three stacks, 8 total[5] |
| Coolplates | — | Three total[5] |
| HMDS-priming module | — | Included[5] |
| Wafer types | — | Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[5] |
| AMC filter | — | Airborne molecular contamination filter on top[5] |
| Temperature control | — | Active control of chamber and resist/developer lines temperature[5] |
| Photoresists available | — | AZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E; bottom layers: LOR 5A, LOR 15C, XHRiC-16[5] |
| Wafer size | — | 100mm and 150mm[5] |
| Photoresist type | — | i-line[5] |
| Process enhancement | — | Airborne molecular contamination filter and active control of chamber and resist/developer line temperature[5] |
| Priming module | — | Additional HMDS-priming module[5] |
| Wafer diameter | — | 100 mm and 150 mm diameter[5] |
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