Waferpedia

Comparison ledger

LinDAversus2200 evo advanced

ASM LinDA, Besi 2200 evo advanced, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Packaging & Bonding, null[1]
Side-by-side comparison of selected equipment models
Attribute
OEMASMBesi
CategoryPackaging & BondingPackaging & Bonding
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyASM LinDABesi 2200 evo advanced
Cited variants
  • Datacon 2200 evo[3]
Specifications
Voltage200 VAC, Single Phase[4]400 VAC[5]
Configuration50/60 Hz[4]—
Vintage (manufacture year)2012[4]—
Machine typeDie bonder[1]—
CategoryPackaging & Bonding[1]—
Power200 VAC, single phase, 50/60 Hz[4]2.3 kVA[5]
Vintage2012[4]—
Type—G4[5]
Phase—3 Phase[5]
Max Current—3.3 A[5]
Main Breaker—D16 A[5]
SCCR—5 kA[5]
Vacuum—-0.08 MPa[5]
Compressed Air—0.60 MPa[5]
Nitrogen—0.10 MPa[5]
Weight—1,500 kg[5]
X/Y placement accuracy—± 3 µm @ 3s[6]
Theta placement accuracy—± 0.07° @ 3s[6]
Bond force range—0.5N to 25N[6]
UPH die attach—up to 7,000 UPH/module[6]
UPH flip chip with dipping—up to 2,500 UPH/module[6]
UPH flip chip without dipping—up to 3,200 UPH/module[6]
Machine dimensions (L x D x H)—1,160 mm x 1,225 mm x 1,750 mm[6]
Uptime—> 98 %[6]
Yield—> 99.95 %[6]
Die size die attach—0.15 mm - 30 mm[6]
Die size flip chip—0.5 mm - 30 mm[6]
Die thickness—>50 µm (thinner on request)[6]
Wafer size—4" - 12" (SEMI M1)[6]
Frame sizes—FF070, FF105, FF108, FF123[6]
Substrate working range—13" x 8" (325 mm x 200 mm)[6]
Heated bond head max temperature—450°C[6]
UV curing power—up to 2,000 mW/cm2 (365 / 405 nm)[6]
Bond rotation—0° - 360°[6]
Number of pickup tools/nozzles—up to 14[6]
Number of eject tools—5[6]
Number of epoxies/adhesives in single pass—3[6]
Bond force—0.5 N – 25 N programmable[6]
Machine dimensions (LxDxH)—1,160 mm x 1,225 mm x 1,750 mm[6]
Flip chip die size—0.5 mm – 30 mm[6]
Heated bond head (optional)—up to 450 °C[6]
UV curing (optional)—up to 2,000 mW/cm² (365/405 nm)[6]
Supply voltage—400 VAC, 3 phase, 50/60 Hz, 2.3 kVA[5]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]dynamicmos.comdynamicmos.com
  3. [3]besi.combesi.com
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]besi.combesi.com
  7. [7]semiconductor.directorysemiconductor.directory