Comparison ledger
Applied Materials Producer GT, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Producer GTApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 2006– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Producer | Oxford Instruments 100 ICP Fluorine |
| Cited variants | — | |
| Specifications | ||
| Chamber A | SiCoNi[1] | — |
| Chamber B | Frontier Etch[1] | — |
| Configuration | Missing:[1] | — |
| OEM | Applied Materials[3] | — |
| Model | Producer GT[3] | — |
| Wafer size | 12 inch[3] | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
| Chamber names | A, B, C[2] | — |
| Current equipment status | Incoming[2] | — |
| Date of manufacture | 2009-01-01[2] | — |
| Configured wafer size | 300mm[2] | — |
| System power rating | 110 AC 3-Phase for system[2] | — |
| Loading configuration | 3 LP / 7 cooling station / 25 wafer FOUP[2] | — |
| Process capability | Advanced lithography and etch patterning down to the 22nm technology node[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
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