Comparison ledger
Applied Materials P5000, Temescal UEFC-4900, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | P5000Applied Materials | UEFC-4900Temescal |
|---|---|---|
| OEM | Applied Materials | Temescal |
| Category | Deposition | Deposition |
| Wafer size | 150mm | 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials P5000 | Temescal UEFC-4900 |
| Specifications | ||
| Process type | Dielectric PECVD[1] | — |
| Dedicated chambers | Two[1] | — |
| Silicon dioxide chemistry | TEOS/O2[1] | — |
| Silicon nitride chemistry | SiH4/NH3 capable[1] | — |
| Maximum wafer size | 8 inches[1] | — |
| Film thickness | Multiple microns thick[1] | — |
| Nominal operating temperature | ~400C[1] | — |
| Number of chambers | 2[1] | — |
| Chemistry for silicon dioxide | TEOS/O2[1] | — |
| Chemistry for silicon nitride | SiH4/NH3[1] | — |
| Deposited film thickness | Multiple microns[1] | — |
| Operating temperature | ~400°C[1] | — |
| Source listing | — | Temescal UEFC-4900 is named in the Temescal systems navigation/lineup[2] |
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