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Comparison ledger

E 500 HPversusEHPI 500

Applied Materials E 500 HP, Varian EHPI 500, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Ion Implantation, null[1]
Side-by-side comparison of selected equipment models
Attribute
E 500 HPApplied Materials
EHPI 500Varian
OEMApplied MaterialsVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials E 500Varian EHPI 500
Specifications
ConfigurationMedium Current[1]Medium Current[2]
Wafer Size8 inch[1]—
Current TypeMedium Current[1]—
Tool type—Medium current ion implanter[3]
Energy range (single charge, X+)—5 – 260 keV[3]
Energy range (extended)—up to 780 keV[3]
Maximum wafer size—200 mm (8 in)[3]
Minimum feature size—0.18 µm[3]
Throughput—Highest industry throughput among medium current implanters (10% higher maximum throughput than previous E-series)[3]
Upgrade / Extensions—BDM (Beam Drift Monitors)[4]
Consumables at end of lifetime—source electrode[4]
Contamination Known—BF3, ASH 3, PH 3[4]
Energy range—up to 780 keV[3]
Wafer size—up to 200 mm[3]
Throughput increase—10% higher maximum throughput[3]
Manufacturer—Varian[5]
Model—EHPI 500[5]
Equipment type—Implanter[5]
Process class—Medium current ion implanter[2]
Expanded energy range—up to 780 keV[3]
Maximum throughput change—10% higher maximum throughputs[3]
Feature size capability—down to 0.18 micron[3]
Wafer size capability—up to 200mm[3]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]web.archive.orgweb.archive.org
  4. [4]inventory listing
  5. [5]Equipment inventory listing
  6. [6]Equipment inventory listing