Comparison ledger
Applied Materials DPS II CIP, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | DPS II CIPApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials DPS | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 4x (D4) SILICON DPS II chamber, 12 Gas line (Standard Gas Line)[1] | — |
| Applicable | 2 Chiller[1] | — |
| Not applicable | Scrubber, Dry Pump[1] | — |
| OEM | Applied Materials[1] | — |
| Model | DPS II CIP[1] | — |
| Category | Etch[2] | — |
| Tool type | Etcher[2] | — |
| Chamber | 4x (D4) SILICON DPS II chamber[1] | — |
| Gas line | 12 Gas line (Standard Gas Line)[1] | — |
| Chiller | 2 Chiller applicable[1] | — |
| Scrubber | Not applicable[1] | — |
| Dry pump | Not applicable[1] | — |
| Vintage | 2005[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
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