Comparison ledger
Applied Materials Centura eMax Nitride, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura eMax NitrideApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 2 Chamber Emax[1] | — |
| Gas | CF4, CH2F2, CHF3, Ar, O2, N2[1] | — |
| OS | AMAT Legacy[1] | — |
| Buffer Robot | HP[1] | — |
| Chiller 1 | AMAT Endura HX 18706-01[1] | — |
| Chiller 2 | Thermo Electron HX 150 106178026[1] | — |
| Wafer size | 8 inch[1] | 4 inch, 6 inch, 8 inch (with clamp change)[2] |
| Chamber configuration | 2 Chamber Emax; 1 Orienter/degas[1] | — |
| Gas chemistry | CF4, CH2F2, CHF3, Ar, O2, N2[1] | — |
| Operating system | AMAT Legacy[1] | — |
| Chamber #A | eMAX[1] | — |
| Chamber #B | eMAX[1] | — |
| Chamber #C | EMPTY[1] | — |
| Chamber #D | EMPTY[1] | — |
| Chamber #E | EMPTY[1] | — |
| Chamber #F | Orienter[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] |
| Cryo DRIE etch rate | — | up to 5 µm/min[2] |
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