Comparison ledger
Applied Materials Centura 5200 Metal, YES 1224 P, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 MetalApplied Materials | 1224 PYES |
|---|---|---|
| OEM | Applied Materials | YES |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | YES 1224 P |
| Specifications | ||
| Configuration | Ti/TiN MCVD[1] | Performance Specifications:[2] |
| Part Number | — | 900-10580-01[2] |
| Power Requirements | — | 208 VAC, 50/60 Hz, Single Phase, 25 FL Amps[2] |
| Clean Room Compatibility | — | Class 10[2] |
| Chamber Material | — | 316L Stainless Steel[2] |
| Chamber Size | — | 40.6 cm W x 46 cm D x 40.6 cm H (16" x 18" x 16")[2] |
| Loading | — | 4 removable internal stainless steel shelves; up to 16 available configurations[2] |
| Filter | — | 0.5 Micron filter[2] |
| Mass Flow Controls | — | Software Specifications:[2] |
| Number of Recipes | — | 6 CVD, 4 Plasma[2] |
| Range of Exposure Time | — | 0-999999[2] |
| Resolution of Timer Setting | — | 1 second[2] |
| RF Plasma Frequency | — | 40 kHz[2] |
| RF Plasma Power | — | 10-1000 Watts[2] |
| Operation Temperature | — | Ambient to 205°C[2] |
| Uniformity | — | ±5°C during dwell after stabilization period[2] |
| Chemical Usage | — | Typical process 3-5 ml[2] |
| Chemical Volume Control | — | Control down to 0.1 ml[2] |
| Process Gas Inputs | — | 1[2] |
| Plasma Gas Inputs | — | 3[2] |
| Voltage | — | 208V, 50/60Hz[3] |
| Power Requirements (first listing) | — | 208 VAC, 50/60 Hz, Single Phase, 25 FL Amps[2] |
| Power Requirements (second listing) | — | 208 VAC, 30 A, 60 Hz, Single Phase, 4835 Watts[2] |
| Chamber Size (interior) | — | 40.6 cm W x 46 cm D x 40.6 cm H (16" x 18" x 16")[2] |
| Chemical Usage (typical process) | — | 3-5 ml[2] |
| Vent Gas Consumption | — | 10 SCF run average[2] |
| Reactant Gas Consumption | — | 4.2 x 10-3 SCF (based on standard process: 170°C @ 1000 W w/20 SCFM pump)[2] |
| Wafer Throughput | — | Typically 1-2 loads/hr; varies by process[2] |
| Slide Throughput | — | 600 slides/hr for CVD[2] |
| Safety | — | Audible and visual alarms; redundant over-temp monitoring[2] |
| Plasma Source | — | Advanced Energy PE-1000 AC plasma source, model 315502-005[3] |
| Liquid Level Controller | — | AMI 286 liquid level controller[3] |
| Vacuum Pump | — | Adixen Pascal 2021C2 vacuum pump (2)[3] |
| Work Table | — | Mobile work table[3] |
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