Comparison ledger
Applied Materials Centura 5200 Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura 5200 DryApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura 5200 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 50/60 Hz[1] | — |
| Voltage | 208V[1] | — |
| Process type | Dry etching[1] | — |
| Wafer size | 8 inch[1] | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
| Wafer size (version) | 200 mm[2] | — |
| Electrical: frequency | 50/60 Hz[1] | — |
| Electrical: voltage | 208V[1] | — |
| Electrical: current | 240A[1] | — |
| Chamber configuration | 2 Chamber dps Metal, 2 Chamber asp+[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
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