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0041-26723 Bonded Assemblyversus2100 FC

Applied Materials 0041-26723 Bonded Assembly, Esec 2100 FC, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMApplied MaterialsEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0041-26723 Bonded AssemblyEsec 2100 FC
Cited variants—
  • Esec 2100 FC plus[1]
  • Esec 2100 FC hS3rd generation[2]
Specifications
Bonding method—Flip Chip[2]
Bonding accuracy—8 μm @3s (High Accuracy Mode)[2]
Min. cycle time—240 ms (incl. dip fluxing)[2]
Wafer size—4” to 12”[2]
Frame size—6", 8” and 12”[2]
Die size—0.2 (with small die kit) to 20 mm[2]
Die thickness—≥ 0.05 mm / ≥ 2 mils (thinner on request)[2]
Strip dimensions—Length up to 500 mm, Width up to 125 mm (flat boats up to 137 mm)[2]
Machine dimensions (W x D x H)—1430 x 1440 x 1400 mm[2]
Weight—Approx. 1,400 kg / 3,000 lb[2]
Wafer flip chip placement speed—Up to 12000 UPH[3]
Wafer flip chip without dipping placement speed—Up to 16000 UPH[3]
Bond force (min)—0.2 N[3]
Number of pick and place stations—Single[4]
Machine dimensions—1430 x 1440 x 1400 mm (W x D x H)[2]
Bond force—0.2 N[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]micro-power.com.hkmicro-power.com.hk
  2. [2]besi.combesi.com
  3. [3]semiconductor.directorysemiconductor.directory
  4. [4]waferpedia.comwaferpedia.com