Comparison ledger
Applied Materials 0010 47763, Tegal 983, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 983Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 125mm |
| Process node | — | down to 0.5 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 983 |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | 983[4] |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Product name | — | 983 ACS[4] |
| Category | — | Diode plasma etch tool[5] |
| Fixed electrode gap | — | 6 mm[5] |
| Round substrate size | — | 125 mm to 150 mm round silicon and GaAs substrates[5] |
| Rectangular substrate size | — | 125 mm to 150 mm on a side[5] |
| Best-suited design rules | — | down to 0.5 micron[5] |
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