Comparison ledger
Applied Materials 0010 47763, Tegal 903e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 903eTegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2000 sale announced · 2001 order announced |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 903e |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | etching oxide contacts[4] |
| Quantity available (source) | 1[2] | — |
| Tool type | — | diode plasma etch tool[4] |
| Substrate diameter range | — | 75 mm to 150 mm round silicon and gallium arsenide (GaAs) substrates[4] |
| Substrate format | — | rectangular substrates from 100 mm to 125 mm on a side[4] |
| Wafer/substrate capacity | — | 75 mm to 150 mm round substrates[4] |
| Rectangular substrate capacity | — | 100 mm to 125 mm on a side[4] |
| Configured form | — | "through the wall" configuration[6] |
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