Comparison ledger
Applied Materials 0010 47763, Tegal 6500 HRe-, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 6500 HRe-Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 6500 HRe- |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | — |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| System type | — | Dual Frequency Etch System Series[1] |
| Tool architecture | — | Hosts a cluster of plasma etching tools[1] |
| Etch chamber configuration | — | One or two etching chambers[1] |
| Wafer processing modes | — | Serial or parallel wafer processing[1] |
| Loading ports | — | Single or dual loading ports[1] |
| Plasma generation | — | Dual frequencies for high-density, capacitively coupled plasma (CCP) generation[1] |
| Plasma confinement | — | Magnetic plasma confinement[1] |
| Etch precision | — | Down to the sub-micron level[1] |
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