Comparison ledger
Applied Materials 0010 47763, STS ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | ICPSTS |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | STS ICP |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[3] | — |
| Type | Monopolar Dual Heated[4] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[5] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[4] | — |
| Model | 0010-47763[3] | — |
| OEM | Applied Materials[3] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[4] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[4] | — |
| Quantity available (source) | 1[4] | — |
| Voltage | — | 400 V[6] |
| Frequency | — | 50 Hz[6] |
| Technology | — | Inductively Coupled Plasma (ICP)[6] |
| Tool type | — | Inductively coupled plasma etcher[6] |
| Electrical configuration | — | 400 V, 50 Hz[6] |
| Process class | — | Dry etcher[2] |
| Wafer size | — | 100 mm wafers[2] |
| Chemistry | — | Chlorine and bromine chemistry[2] |
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