Comparison ledger
Applied Materials 0010 47763, SPTS XeF2, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | XeF2SPTS |
|---|---|---|
| OEM | Applied Materials | SPTS |
| Category | Etch | Etch |
| Wafer size | — | Up to 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2013 Acquisition of XACTIX, Inc. · 2013 XACTIX acquisition |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | SPTS XeF2 |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Etch type | — | Isotropic etch[4] |
| Selectivity | — | Over 1000:1 between Si/photoresist, Si/SiO2, and Si/SiN[4] |
| Gas flow modes | — | Continuous and pulsed gas flow[4] |
| Operating temperature | — | Room temperature[4] |
| Plasma | — | No plasma[4] |
| Substrate size | — | Up to 6-inch wafers[4] |
| Isotropic etch materials | — | Si, Mo, Ge, W, C[4] |
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