Comparison ledger
Applied Materials 0010 47763, Lam Research SEZ 323 Spin, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | SEZ 323 SpinLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | Single wafer |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Lam Research SEZ |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[4] | Chambers (2)[7] |
| Type | Monopolar Dual Heated[5] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[6] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[5] | — |
| Model | 0010-47763[4] | 323[7] |
| OEM | Applied Materials[4] | Lam / SEZ[7] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[5] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[5] | — |
| Quantity available (source) | 1[5] | — |
| Wafer Sizes | — | 8, 12 inch[7] |
| Chambers | — | 2[7] |
| Wafer sizes | — | 8 inch, 12 inch[7] |
| Number of chambers | — | 2[7] |
| Tool type | — | Spin Etcher[7] |
| Voltage | — | 400 VAC[2] |
| Phase | — | 3 Phase[2] |
| Max. Current | — | 75 A[2] |
| Wafer size | — | Single wafer[2] |
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