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0010-22161 High EFF RF MatchversusNSR SF 200

Applied Materials 0010-22161 High EFF RF Match, Nikon NSR SF 200, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMApplied MaterialsNikon
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-22161 High EFF RF MatchNikon NSR
Specifications
MakeApplied Materials[1]—
Model0010-22161[1]—
DescriptionHTESC PH 1 REV A[2]—
ConditionUsed[2]—
Stock NumberBM6628[2]—
Configuration—HDD not included[3]
Chamber Type—Asahi[3]
Reticle Size—6"[3]
Field Size—26[3]
RL Linrary—L10+10[3]
Reticle PD/PPD—YEs[3]
Reticle SMIF—No[3]
Wafer Chuck Type—Pin[3]
Wafer Loader Type—Type 3[3]
Pre Alignment 2—OF[3]
In-Line—Right[3]
Wafer Carrier Table—Right[3]
Alignment Sensor—LSA/FIA/LIA[3]
Mini Computer—Alpha[3]
Software Version—MCSV: Ver E5.21F Tool[3]
Laser—Gigaphoton G21K2[3]
Laser Total Shot—19420.349 Mpls[3]
Wavelength—248 nm[4]
Lens NA—0.63[4]
Exposure Area—26 mm x 33 mm[4]
Reduction Ratio—1/4[4]
Resolution—< 150 nm[4]
Throughput (300 mm)—> 110 wafers/hour[4]
Throughput (200 mm)—> 120 wafers/hour[4]
Wafer Size (stated by source)—200/300 mm[4]
Wafer Size (other source)—6 inch[3]
Sources (4)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]tarasemi.comtarasemi.com
  3. [3]inventory listing
  4. [4]web.archive.orgweb.archive.org