Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Keysight 33600 A, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | 33600 AKeysight |
|---|---|---|
| OEM | Applied Materials | Keysight |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 2013– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Keysight 33600 A |
| Cited variants | — | |
| Specifications | ||
| Make | Applied Materials[2] | — |
| Model | 0010-22161[2] | — |
| Description | HTESC PH 1 REV A[3] | — |
| Condition | Used[3] | — |
| Stock Number | BM6628[3] | — |
| Maximum sine wave frequency | — | 120 MHz (33621A/33622A); 80 MHz (33611A/33612A)[1] |
| Maximum pulse frequency | — | 100 MHz[1] |
| Sampling rate | — | 1 GSa/s[1] |
| Arbitrary waveform memory (standard) | — | 4 MSa per channel[1] |
| Arbitrary waveform memory (optional) | — | 64 MSa per channel with Option MEM[1] |
| Jitter (rms) | — | < 1 ps[1] |
| Total harmonic distortion (THD) | — | 0.03%[1] |
| Rise/fall time (pulse, VOUT ≤ 4 Vpp) | — | 2.9 ns[1] |
| Amplitude resolution | — | 14-bit[4] |
| Phase noise (SSB, 80 MHz model, 10 kHz offset) | — | -122 dBc/Hz[1] |
| Maximum frequency (80 MHz models) | — | 80 MHz[1] |
| Maximum frequency (120 MHz models) | — | 120 MHz[1] |
| Sampling rate (80 MHz models) | — | 660 MSa/s[1] |
| Sampling rate (120 MHz models) | — | 1 GSa/s[1] |
| Rise and fall time (square/pulse, VOUT ≤ 4 Vpp) | — | 2.9 ns[1] |
| Standard arbitrary waveform memory | — | 4 MSa per channel[1] |
| Optional arbitrary memory (Option MEM) | — | 64 MSa per channel[1] |
| Amplitude range | — | 1 mVpp to 10 Vpp into 50 Ω[1] |
| Arbitrary waveform voltage resolution | — | 14 bits[1] |
| PRBS bit rate (VOUT ≤ 4 Vpp) | — | 1 Mbps to 200 Mbps[1] |
| Weight (nominal) | — | 3.5 kg (7.7 lbs)[1] |