Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor |
| Specifications | ||
| OEM | Applied Materials[1] | Lam Research[3] |
| Model | 0010-16392[1] | Lam AutoEtch 590[3] |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | 4,5,6 inch capability.[3] |
| Electrode Configuration | Dual[2] | — |
| Category | — | Plasma Etch[3] |
| Original Equipment Manufacturer | — | Lam Research[3] |
| Condition | — | AS IS condition(No chiller, no pump, With ENI OEM 12 RF Generator)[3] |
| Valid Time | — | Subject to prior sale[3] |
| Lead Time | — | Ready to go[3] |
| Warranty | — | No.[3] |
| Refund | — | No.[3] |
| Inspection | — | Against appointment[3] |
| Wafer size | — | Lam AutoEtch 590 Wafer Belt Drive System[3] |
| Wafer Size Capability | — | 4,5,6 inch[3] |
| Wafer Size Configuration | — | 4 and 6 inch configuration without hardware change[4] |
| Wafer Handling | — | In-line cassette to cassette, fully automated, single wafer[3] |
| Chamber Type | — | Double air-locked, parallel plate[3] |
| RF Generator | — | ENI OEM 12[3] |
| Display | — | CRT monitor display[3] |
| Control | — | Automatic, closed-loop feedback control, double keylocked[3] |
| Gas Panel Capacity | — | Five gases independently, actual capacity six gases (two may share fifth flow controller)[3] |
| Wafer size capability | — | 4, 5, 6 inch capability[3] |
| Process type | — | single wafer[3] |
| Automation | — | fully automated[3] |
| Wafer handling | — | cassette-to-cassette[3] |
| Chamber structure | — | double air-locked[3] |
| Plasma configuration | — | parallel plate[3] |
| Process parameters | — | RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[5] |
| Control architecture | — | automatic, closed-loop feedback control[3] |
| Interlock | — | double keylocked[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →