Comparison ledger
Applied Materials 0010-03485 Magnet Assy, JEOL JBX-8100FS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-03485 Magnet AssyApplied Materials | JBX-8100FSJEOL |
|---|---|---|
| OEM | Applied Materials | JEOL |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-03485 Magnet Assy | JEOL JBX-8100FS |
| Cited variants | — | |
| Specifications | ||
| Configuration | WP AL 300mm PVD[2] | — |
| OEM | Applied Materials[2] | — |
| Model | 0010-03485[2] | — |
| Description | MAGNET ASSY, WP AL 300MM PVD[3] | — |
| Process | PVD[4] | — |
| Wafer size | 300mm[5] | — |
| Version | Spares[5] | — |
| Part Number | 0010-03485[2] | — |
| Manufacturer | Applied Materials[2] | — |
| Process Type | PVD (Physical Vapor Deposition)[2] | — |
| Application (Material) | Aluminum (AL)[2] | — |
| Wafer Diameter (associated) | 300 mm[2] | — |
| machine type | — | maskless lithograph ML2 type[6] |
| emitter | — | patented ZrO/W (Schottky) emitter[6] |
| Emitter type | — | ZrO/W (Schottky) emitter[6] |
| Writing method | — | Spot beam, vector scan, step and repeat[1] |
| Accelerating voltage | — | 100 kV (G1); 100/50 kV (G2); 200/130/100/50 kV (G3)[1] |
| Beam current range | — | 5 × 10⁻¹² to 2 × 10⁻⁷ A[1] |
| Maximum scanning speed | — | 125 MHz[1] |
| Field size (high resolution mode) | — | 100 μm × 100 μm[7] |
| Field size (high throughput mode) | — | 1,000 μm × 1,000 μm (G1/G2); 2,000 μm × 2,000 μm (G3)[1] |
| Stage movable area | — | 190 mm × 170 mm[1] |
| Stage positioning resolution | — | 0.6 nm (standard); 0.15 nm (optional)[1] |
| Overlay accuracy (high resolution mode) | — | ≤±9 nm (G1/G2); ≤±8 nm (G3)[1] |
| Overlay accuracy (high throughput mode) | — | ≤±20 nm[7] |
| Field stitching accuracy (high resolution mode) | — | ≤±9 nm (G1/G2); ≤±8 nm (G3)[1] |
| Field stitching accuracy (high throughput mode) | — | ≤±20 nm[7] |
| Minimum line width | — | 8 nm[8] |
| Minimum step size | — | 0.5 nm[8] |
| Substrate size | — | Maximum 200 mm φ wafer, 6 inch mask blanks, and micro sample pieces of any size[1] |
| Power consumption (normal operation) | — | Approximately 3 kVA[1] |
| Footprint (W × D × H) | — | 4.9 m × 3.7 m × 2.6 m[1] |
| Electron source | — | ZrO/W (Schottky) thermal field emitter[6] |