Comparison ledger
Aixtron G 5 MOCVD Reactor, Applied Materials 0020 17485 Part, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | G 5 MOCVD ReactorAixtron | 0020 17485 PartApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron G 5 MOCVD Reactor | Applied Materials 0020 17485 Part |
| Cited variants | — | |
| Specifications | ||
| Configuration | SiC[3] | Strap, RF Out 2 Balanced Coil Match, Hdp[4] |
| Voltage | 208V/120V AC[3] | — |
| Phase | 3 Phase[3] | — |
| Frequency | 60 Hz[3] | — |
| Process Type | Metal Organic Chemical Vapor Deposition (MOCVD)[3] | — |
| Wafer Size | 4 inch[3] | — |
| Substrate Material | SiC (Silicon Carbide)[3] | — |
| Power Supply | 208V/120V AC, 3-phase, 60 Hz[3] | — |
| Vintage Year | 2014[3] | — |
| Wafer Size (specific unit) | 4 inch[3] | — |
| Material (specific unit) | SiC[3] | — |
| Electrical (specific unit) | 208V/120V AC, 3 Phase, 60 Hz[3] | — |
| Vintage (specific unit) | 2014[3] | — |
| Configuration (AIX G5+ C) | 8x150 mm or 5x200 mm[1] | — |
| Substrate (AIX G5+ C) | Si/Sapphire/SiC, 150/200 mm[1] | — |
| Reactor Type (AIX G5+ C) | Planetary reactor with Cl2 in-situ cleaning[1] | — |
| Wafer Handling (AIX G5+ C) | Cassette-to-cassette[1] | — |
| Configuration (AIX G5 WW C) | 8x150 mm[2] | — |
| Wafer Handling (AIX G5 WW C) | Cassette-to-cassette, hot wafer transfer[2] | — |
| Reactor Type (AIX G5 WW C) | Planetary reactor[2] | — |
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